Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

N. P. Armitage, Riccardo Tediosi, F. Lévy, E. Giannini, L. Forro, and D. van der Marel
Phys. Rev. Lett. 104, 237401 – Published 8 June 2010

Abstract

The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and results in a semimetal-semiconductor (SMSC) transition around 25 kbar. This transition is nominally of the topological “Lifshitz” Fermi surface variety, but there are open questions about the role of interactions at low charge densities. Using a novel pressure cell with optical access, we have performed an extensive study of bismuth’s infrared conductivity under pressure. In contrast to the expected pure band behavior we find signatures of enhanced interaction effects, including strongly coupled charge-plasmon (plasmaron) features and a plasma frequency that remains finite up to the transition. These effect are inconsistent with a pure Lifshitz bandlike transition. We postulate that interactions play a central role in driving the transition.

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  • Received 2 December 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.237401

©2010 American Physical Society

Authors & Affiliations

N. P. Armitage1,2, Riccardo Tediosi2, F. Lévy2, E. Giannini2, L. Forro3, and D. van der Marel2

  • 1Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
  • 2Département de Physique de la Matière Condensée, Université de Genève, quai Ernest-Ansermet 24, CH1211 Genève 4, Switzerland
  • 3Ecole Polytechnique Federale de Lausanne, Switzerland

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Vol. 104, Iss. 23 — 11 June 2010

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