Figure 1

(a) In-plane $\phi$ scan about the (111) peak of the FeGe(111) film and the Si(111) substrate. (b) Hysteresis loop of 300-nm FeGe film at 10 K. Inset: in-plane ac susceptibility of the FeGe(111) film as a function of temperature. (c) Resistivity ratio $R(T)/R(300\mathrm{K})$ as a function of temperature for films with various thicknesses indicated. Inset: resistivity at 300 K as a function of thickness.Reuse & Permissions

Figure 2

Hall resistivity as a function of field for (a) 60-nm film at 10 K and (b) 60-nm film at 150 K. Inset: 240-nm film at 280 K, showing experimental ${\rho }_H$ (black line, bottom curve from the left) and calculated (red line, middle curve from the left) values of $R_{0}H+R_{S}M$, according to Eq. (1), and the topological Hall resistivity ${\rho }_{TH}$ (blue line, top curve from the left). Color map of topological Hall resistivity in the $H\mathrm{\text{−}}T$ plane for (c) 300-nm and (d) 18-nm film and the values of $H_m$. Inset of (c): Skyrmion-like (precursor states) region for bulk FeGe from Ref. 22. Inset of (d): maximum values of $(-{\rho }_{TH})$ as a function of temperature.Reuse & Permissions

Figure 3

(a) Normalized $\mathrm{THR}={\rho }_{TH}/{\rho }_H(25\mathrm{kOe})$ as a function of a magnetic field for various thicknesses at 10 K. Inset: $K/K_0$ and $H_{\perp S}$ as a function of thickness $t$. (b) Color map of topological Hall resistivity in the $H\mathrm{\text{−}}t$ plane at $T=10\mathrm{K}$; square symbols are the values of $H_m$.Reuse & Permissions

Figure 4

Hall resistivity hysteresis loop for 30-nm films at 10 K.Reuse & Permissions