Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films

Somdutta Mukherjee, Amritendu Roy, Sushil Auluck, Rajendra Prasad, Rajeev Gupta, and Ashish Garg
Phys. Rev. Lett. 111, 087601 – Published 21 August 2013

Abstract

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric gallium ferrite. Piezoforce measurements show a 180° phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in the thin films. Further, temperature-dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magnetodielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier but also give rise to the observed ferroelectricity, making gallium ferrite a unique single phase multiferroic.

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  • Received 22 March 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.087601

© 2013 American Physical Society

Authors & Affiliations

Somdutta Mukherjee1, Amritendu Roy2, Sushil Auluck3, Rajendra Prasad1, Rajeev Gupta1,4, and Ashish Garg2

  • 1Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India
  • 2Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
  • 3CSIR National Physical Laboratory, K.S. Krishnan Marg, New Delhi 110012, India
  • 4Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016, India

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Issue

Vol. 111, Iss. 8 — 23 August 2013

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