Semimetallic Two-Dimensional Boron Allotrope with Massless Dirac Fermions

Xiang-Feng Zhou, Xiao Dong, Artem R. Oganov, Qiang Zhu, Yongjun Tian, and Hui-Tian Wang
Phys. Rev. Lett. 112, 085502 – Published 26 February 2014
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Abstract

It has been widely accepted that planar boron structures, composed of triangular and hexagonal motifs are the most stable two-dimensional (2D) phases and likely precursors for boron nanostructures. Here we predict, based on an ab initio evolutionary structure search, a novel 2D boron structure with nonzero thickness, which is considerably, by 50meV/atom, lower in energy than the recently proposed α-sheet structure and its analogues. In particular, this phase is identified for the first time to have a distorted Dirac cone, after graphene and silicene the third elemental material with massless Dirac fermions. The buckling and coupling between the two sublattices not only enhance the energetic stability, but also are the key factors for the emergence of the distorted Dirac cone.

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  • Received 28 August 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.085502

© 2014 American Physical Society

Authors & Affiliations

Xiang-Feng Zhou1,2,*, Xiao Dong1,2, Artem R. Oganov2,3,4, Qiang Zhu2, Yongjun Tian5, and Hui-Tian Wang1,6

  • 1School of Physics and Key Laboratory of Weak-Light Nonlinear Photonics, Nankai University, Tianjin 300071, China
  • 2Department of Geosciences, Center for Materials by Design, and Institute for Advanced Computational Science, Stony Brook University, Stony Brook, New York 11794, USA
  • 3Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny City, Moscow Region 141700, Russian Federation
  • 4School of Materials Science, Northwestern Polytechnical University, Xi’an 710072, China
  • 5State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
  • 6National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

  • *xfzhou@nankai.edu.cn, zxf888@163.com

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Issue

Vol. 112, Iss. 8 — 28 February 2014

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