States in the Gap in Glassy Semiconductors

R. A. Street and N. F. Mott
Phys. Rev. Lett. 35, 1293 – Published 10 November 1975
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Abstract

A model is discussed which for the first time provides a unified description of many electrical and optical properties of chalcogenide glasses. It is proposed that localized gap states are at dangling bonds, and that lattice-distortion effects are sufficiently strong that these states exhibit an effective negative electron-electron correlation energy.

  • Received 24 June 1975

DOI:https://doi.org/10.1103/PhysRevLett.35.1293

©1975 American Physical Society

Authors & Affiliations

R. A. Street

  • Max-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of Germany

N. F. Mott

  • Cavendish Laboratory, Cambridge, England

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Issue

Vol. 35, Iss. 19 — 10 November 1975

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