Extensive experimental evidence indicates that the Schottky-barrier formation on III-V semiconductors is due to defects formed near the interface by deposition of the metal (or of oxygen). Detailed level positions are established and assigned to either missing column III or V atoms. This model also applies to formation of states at III-V oxide interface states.

• Received 5 September 1979

DOI:https://doi.org/10.1103/PhysRevLett.44.420