Alloy Clustering in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mi mathvariant="normal">As</mi></math></span> Compound Semiconductors Grown by Molecular Beam Epitaxy

P. M. Petroff; A. Y. Cho; F. K. Reinhart; A. C. Gossard; W. Wiegmann

doi:10.1103/PhysRevLett.48.170

Alloy Clustering in ${Ga}_{1 - x} {Al}_{x} As$ Compound Semiconductors Grown by Molecular Beam Epitaxy

P. M. Petroff, A. Y. Cho, F. K. Reinhart, A. C. Gossard, and W. Wiegmann

Phys. Rev. Lett. 48, 170 – Published 18 January 1982

Abstract

Direct evidence of alloy clustering in the ${Ga}_{1 - x} {Al}_{x} As$ alloy system is presented. Clustering is observed only on the nonpolar surface of GaAs. An exchange reaction model is proposed to account for the existence of a surface-orientation-dependent miscibility gap for this alloy system.