Abstract
A non-Hermitian eigenvalue equation is proposed to determine binding energies and widths of core excitons in semiconductors, taking into account the time dependence of screening effects through the dielectric matrix . Deviations from static screening contribute both an increase of the binding energy and a narrowing of the Auger width. Numerical estimates of both effects for the Si transition give qualitative agreement with experimental data when the exciton size is reduced by band-structure effects.
- Received 8 July 1982
DOI:https://doi.org/10.1103/PhysRevLett.49.1519
©1982 American Physical Society