Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model

P. Parayanthal and Fred H. Pollak
Phys. Rev. Lett. 52, 1822 – Published 14 May 1984
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Abstract

Using a "spatial correlation" model with a Gaussian correlation function we have for the first time quantitatively explained the broadening and asymmetry of the first-order longitudinal-optic phonon Raman spectrum induced by alloy potential fluctuations. The systems studied were the representative alloy semiconductors Ga1xAlxAs/GaAs and Ga0.47In0.53As/InP. This analysis provides important insights into the microscopic nature of the alloy potential fluctuations.

  • Received 8 November 1983

DOI:https://doi.org/10.1103/PhysRevLett.52.1822

©1984 American Physical Society

Authors & Affiliations

P. Parayanthal and Fred H. Pollak

  • Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210

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Vol. 52, Iss. 20 — 14 May 1984

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