Atom Location by Axial-Electron-Channeling Analysis

S. J. Pennycook; J. Narayan

doi:10.1103/PhysRevLett.54.1543

Atom Location by Axial-Electron-Channeling Analysis

S. J. Pennycook and J. Narayan

Phys. Rev. Lett. 54, 1543 – Published 8 April 1985

Abstract

The channeling of electrons along or between atomic rows in a crystal is used as the basis of a powerful lattice-location technique capable of analyzing small quantities of crystal impurities with high spatial resolution. We demonstrate the technique by locating Sb dopant in Si and compare the results with ion-channeling and planar-electron-channeling analysis. Delocalization corrections are required with the electron-channeling analyses.

Received 27 September 1984

DOI:https://doi.org/10.1103/PhysRevLett.54.1543

Authors & Affiliations

S. J. Pennycook and J. Narayan^*

Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

^*On sabbatical leave at the Microelectronics Center of North Carolina, Research Triangle Park, N.C. 27709, and the Materials Engineering Department, North Carolina State University, Raleigh, N.C. 27650.