Non-Lorentzian Noise at Semiconductor Interfaces

A. J. Madenach and J. Werner
Phys. Rev. Lett. 55, 1212 – Published 9 September 1985
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Abstract

Electrical noise at silicon grain boundaries deviates significantly from Lorentzian behavior. The noise shows a 1f dependence over a wide frequency range. We present a new model to explain this behavior quantitatively. Our model is based on generation and recombination of charge carriers at interface states and explicitly takes into account inhomogeneities within the boundary plane. Such inhomogeneities generally cause deviations from Lorentzian spectra. The quantitative analysis allows us to characterize these interface states.

  • Received 24 June 1985

DOI:https://doi.org/10.1103/PhysRevLett.55.1212

©1985 American Physical Society

Authors & Affiliations

A. J. Madenach and J. Werner*

  • Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany

  • *Present address: IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598.

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Issue

Vol. 55, Iss. 11 — 9 September 1985

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