Room-Temperature Optical Nonlinearities in GaAs

Y. H. Lee, A. Chavez-Pirson, S. W. Koch, H. M. Gibbs, S. H. Park, J. Morhange, A. Jeffery, N. Peyghambarian, L. Banyai, A. C. Gossard, and W. Wiegmann
Phys. Rev. Lett. 57, 2446 – Published 10 November 1986
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Abstract

We report the first systematic study of the frequency dependence of optical nonlinearities of bulk GaAs at room temperature. In contrast to the previous understanding, band filling and plasma screening of Coulomb enhancement of continuum states are found to be the dominant contributions to the dispersive optical nonlinearities under quasi steady-state excitations. The partly phenomenological semiconductor plasma theory is in good agreement with the experimental data.

  • Received 6 June 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.2446

©1986 American Physical Society

Authors & Affiliations

Y. H. Lee, A. Chavez-Pirson, S. W. Koch*, H. M. Gibbs, S. H. Park, J. Morhange, A. Jeffery, and N. Peyghambarian

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

L. Banyai

  • Institut für Theoretische Physik, University of Frankfurt, Frankfurt, Federal Republic of Germany

A. C. Gossard and W. Wiegmann

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

  • *Jointly with Physics Department.

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Vol. 57, Iss. 19 — 10 November 1986

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