Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

J. Kakalios, R. A. Street, and W. B. Jackson
Phys. Rev. Lett. 59, 1037 – Published 31 August 1987
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Abstract

In this paper we find that the stretched-exponential relaxation commonly observed in disordered systems is explained by time-dependent atomic diffusion. The relaxation is observed in the electronic properties of hydrogenated amorphous silicon (a-Si:H), a ‘‘hydrogen glass’’ material, and reflects the equlibration of localized electronic states. The relaxation is attributed to the motion of bonded hydrogen which exhibits dispersive diffusion with a characteristic power-law time dependence. A quantitative relation between the relaxation and the diffusion is established.

  • Received 1 April 1987

DOI:https://doi.org/10.1103/PhysRevLett.59.1037

©1987 American Physical Society

Authors & Affiliations

J. Kakalios, R. A. Street, and W. B. Jackson

  • Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

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Issue

Vol. 59, Iss. 9 — 31 August 1987

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