Abstract
In situ transmission electron microscopy during the growth of on Si by molecular beam epitaxy shows that the metastable phase θ-Si grows at ∼300 °C upon the reaction of certain deposited Ni films on (111) but never on (100) Si. Its existence correlates with the subsequent growth of type-A at 450 °C. The low energy of epitaxial interfaces can influence phase formation in very thin films, leading to unusual thickness-dependent behavior such as the type-B–type-A enigma.
- Received 29 September 1987
DOI:https://doi.org/10.1103/PhysRevLett.60.1158
©1988 American Physical Society