Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field

E. E. Mendez, F. Agulló-Rueda, and J. M. Hong
Phys. Rev. Lett. 60, 2426 – Published 6 June 1988
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Abstract

We have observed that a strong electric field E shifts to higher energies the photoluminescence and photocurrent peaks of a GaAs-Ga0.65Al0.35As superlattice of period D (=65 Å), which we explain by a field-induced localization of carriers to isolated quantum wells. Good agreement is found between observed and calculated shifts when the large field-induced increase of the exciton binding energy is taken into account. At moderate fields [≅(2-3)×104 V/cm], the coupling between adjacent wells is manifested by four additional peaks that shift at the rates ±eED and ±2eED and correspond to transitions that involve different levels of the Stark ladder.

  • Received 21 January 1988

DOI:https://doi.org/10.1103/PhysRevLett.60.2426

©1988 American Physical Society

Authors & Affiliations

E. E. Mendez, F. Agulló-Rueda, and J. M. Hong

  • IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 60, Iss. 23 — 6 June 1988

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