Multiphonon Tunneling Conduction of Localized π Electrons in Amorphous Carbon Films

K. Shimakawa and K. Miyake
Phys. Rev. Lett. 61, 994 – Published 22 August 1988
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Abstract

The temperature dependence of the dc conductivity has been measured on sputtered amorphous carbon films. The conductivity is proportional to Tn with n=1517 over a wide temperature range, suggesting for the first time that the multiphonon tunneling transition with weak electron-lattice coupling of localized π electrons is a probable mechanism for charge transport. This may be attributed to the delocalized nature of the π defect in amorphous carbon.

  • Received 3 February 1988

DOI:https://doi.org/10.1103/PhysRevLett.61.994

©1988 American Physical Society

Authors & Affiliations

K. Shimakawa and K. Miyake

  • Department of Electronics, Faculty of Engineering, Gifu University, Gifu 501-11, Japan

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Issue

Vol. 61, Iss. 8 — 22 August 1988

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