Results of the low-temperature precipitation of interstitial Fe (≊250 °C) in Czochralski-grown Si after different annealing treatments for the precipitation of oxygen are presented. It is concluded that the Fe solubility is not affected by the oxygen-precipitation process. The Fe-precipitation kinetics are found to be strongly accelerated by oxygen-precipitation–induced defects. Based on the results the mechanism of internal gettering is derived. For the first time the contribution of oxygen precipitates and dislocations to the internal-gettering process have been determined quantitatively.

• Received 16 October 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.196