Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates

Ralf Kunkel, Bene Poelsema, Laurens K. Verheij, and George Comsa
Phys. Rev. Lett. 65, 733 – Published 6 August 1990
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Abstract

The discovery of a reentrant layer-by-layer growth during molecular-beam epitaxy of Pt on Pt(111) is reported. Explanations of the reentrant behavior based on previous field-ion-microscopy observations are proposed.

  • Received 9 April 1990

DOI:https://doi.org/10.1103/PhysRevLett.65.733

©1990 American Physical Society

Authors & Affiliations

Ralf Kunkel, Bene Poelsema, Laurens K. Verheij, and George Comsa

  • Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich Gmbh, Postfach 1913, D-517, Jülich, West Germany

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Issue

Vol. 65, Iss. 6 — 6 August 1990

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