Effect of strain on surface morphology in highly strained InGaAs films

C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander
Phys. Rev. Lett. 66, 3032 – Published 10 June 1991
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Abstract

The early stages of growth of highly strained InxGa1xAs on GaAs(100) have been investigated as a function of composition. The evolution of the film microstructure as determined by in situ STM and RHEED is from a two-dimensional rippled surface in the beginning stages of growth to a three-dimensional island morphology. A growth mode is proposed whereby strain relaxation is initially achieved through the kinetically limited evolution of surface morphology. In contrast to traditional critical-thickness theories, significant strain relief is accommodated by a coherent island morphology. This study represents a new view for both the growth mode and initial strain relaxation in thin films.

  • Received 28 February 1991

DOI:https://doi.org/10.1103/PhysRevLett.66.3032

©1991 American Physical Society

Authors & Affiliations

C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander

  • H. M. Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109-1120

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Vol. 66, Iss. 23 — 10 June 1991

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