Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Si</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ge</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span> epitaxy

D. E. Jesson; S. J. Pennycook; J. Z. Tischler; J. D. Budai; J.-M. Baribeau; D. C. Houghton

doi:10.1103/PhysRevLett.70.2293

Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during ${Si}_{x}$ ${Ge}_{1 - x}$ epitaxy

D. E. Jesson, S. J. Pennycook, J. Z. Tischler, J. D. Budai, J.-M. Baribeau, and D. C. Houghton

Phys. Rev. Lett. 70, 2293 – Published 12 April 1993

Abstract

Atomic-scale compositional ordering in ${Si}_{x}$ ${Ge}_{1 - x}$ alloys is directly linked to the formation of coherent islands during Stranski-Krastanow growth. The vicinal surfaces associated with nonequilibrium island shapes induce a bilayer step flow growth mode, and the ordering results from Ge segregation at $D_{B}$ kinks.