Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors

Fang Yang, M. Wilkinson, E. J. Austin, and K. P. O’Donnell
Phys. Rev. Lett. 70, 323 – Published 18 January 1993; Erratum Phys. Rev. Lett. 72, 1945 (1994)
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Abstract

We consider the optical absorption and emission spectra of excitons in two-dimensional semiconductors disordered through interface fluctuations. These spectra show a universal behavior exemplified by the fact that the offset of the spectral peaks (the Stokes shift) is proportinal to their linewidths over a range of at least 2 orders of magnitude. We introduce a topographical theory of the exciton spectra which models such behavior in terms of statistical properties of a Gaussian random function. The coefficient of proportionality between the Stokes shift and the exciton absorption linewidth is found to be γ=2/ √6π ln2 =0.553 by analysis and 0.6 by experiment.

  • Received 29 July 1992

DOI:https://doi.org/10.1103/PhysRevLett.70.323

©1993 American Physical Society

Erratum

Origin of the Stokes Shift: A Geometrical Model of Exciton Spectra in 2D Semiconductors

Fang Yang, M. Wilkinson, E. J. Austin, and K. P. O'Donnell
Phys. Rev. Lett. 72, 1945 (1994)

Authors & Affiliations

Fang Yang, M. Wilkinson, E. J. Austin, and K. P. O’Donnell

  • Department of Physics and Applied Physics, John Anderson Building, University of Strathclyde, Glasgow G4 0NG, Scotland, United Kingdom

Comments & Replies

Comment on ‘‘Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors’’

J. A. Kash
Phys. Rev. Lett. 71, 1286 (1993)

Yang et al. reply

F. Yang, M. Wilkinson, E. J. Austin, and K. P. O’Donnell
Phys. Rev. Lett. 71, 1287 (1993)

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Vol. 70, Iss. 3 — 18 January 1993

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