Structure of Fast Ion Conducting and Semiconducting Glassy Chalcogenide Alloys

Chris J. Benmore and Philip S. Salmon
Phys. Rev. Lett. 73, 264 – Published 11 July 1994
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Abstract

The method of isotopic substitution in neutron diffraction is used to measure the metal-metal partial structure factor SMM(k) for the glassy fast ion conductor gAg2As3Se4 and for the glassy semiconductor gCu2As3Se4. The remaining partial structure factors are hence separated into two functions which comprise either the Mμ(μ=AsorSe) or μμ species. It is found that the short range order of the network former gAsSe is not destroying on alloying with M2Se and that the most significant structural differences occur with respect to the M atom ordering.

  • Received 11 January 1994

DOI:https://doi.org/10.1103/PhysRevLett.73.264

©1994 American Physical Society

Authors & Affiliations

Chris J. Benmore* and Philip S. Salmon

  • School of Physics, University of East Anglia, Norwich, NR4 7TJ United Kingdom

  • *Now at Department of Physics, University of Guelph, Guelph, Ontario, Canada N1G 2W1.

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Vol. 73, Iss. 2 — 11 July 1994

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