We show theoretically that interband transitions in a bulk semiconductor via coherent one- and two-photon absorption leads to the formation of an electrical current whose direction is controlled by the relative phase of the beams. The phenomenon can occur in centrosymmetric and noncentrosymmetric materials; easily measurable currents are predicted for GaAs under realistic experimental conditions.

• Received 2 October 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.1703