Noise-Induced Roughening Evolution of Amorphous Si films Grown by Thermal Evaporation

H.-N. Yang, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu
Phys. Rev. Lett. 76, 3774 – Published 13 May 1996; Erratum Phys. Rev. Lett. 77, 1412 (1996)
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Abstract

We report a growth front morphology study of thermally evaporated amorphous Si films using atomic force microscopy. Since there are no well-defined atomic steps on an amorphous film surface, there is no Schwoebel barrier effect which would give rise to a moundlike morphology. The dynamic scaling characteristics observed during growth are unambiguously explained by a noise-induced growth mechanism. The roughness and growth exponents measured are consistent with the Mullins diffusion model with noise.

  • Received 4 December 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.3774

©1996 American Physical Society

Erratum

Noise-Induced Roughening Evolution of Amorphous Si films Grown by Thermal Evaporation

H. -N. Yang, Y. -P. Zhao, G. -C. Wang, and T. -M. Lu
Phys. Rev. Lett. 77, 1412 (1996)

Authors & Affiliations

H.-N. Yang, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu

  • Department of Physics, Applied Physics, and Astronomy, and Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590

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Issue

Vol. 76, Iss. 20 — 13 May 1996

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