Unconventional Electronic Structure Evolution with Hole Doping in Bi2Sr2CaCu2O8+δ: Angle-Resolved Photoemission Results

D. S. Marshall, D. S. Dessau, A. G. Loeser, C-H. Park, A. Y. Matsuura, J. N. Eckstein, I. Bozovic, P. Fournier, A. Kapitulnik, W. E. Spicer, and Z.-X. Shen
Phys. Rev. Lett. 76, 4841 – Published 17 June 1996
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Abstract

We report angle-resolved photoemission results on Bi2Sr2Ca1xDyxCu2O8+δ and oxygen depleted Bi2Sr2CaCu2O8+δ investigating the electronic structure changes above Tc in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with Tc of 60–70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near (π,0) above Tc.

  • Received 5 December 1995

DOI:https://doi.org/10.1103/PhysRevLett.76.4841

©1996 American Physical Society

Authors & Affiliations

D. S. Marshall1, D. S. Dessau1,2,5, A. G. Loeser1,2, C-H. Park1,2, A. Y. Matsuura1, J. N. Eckstein3, I. Bozovic3, P. Fournier4, A. Kapitulnik4, W. E. Spicer1, and Z.-X. Shen1,2,4

  • 1Solid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305
  • 2Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305
  • 3Ginzton Research Center, Varian Associates, Palo Alto, California 94304-1025
  • 4Department of Applied Physics, Stanford University, Stanford, California 94305
  • 5Department of Physics, University of Colorado, Boulder, Colorado 80309

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Vol. 76, Iss. 25 — 17 June 1996

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