Abstract
We have confirmed that a spin-orbit interaction in an inverted IGAs/IAAs quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted IGAs/IAAs heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].
- Received 23 July 1996
DOI:https://doi.org/10.1103/PhysRevLett.78.1335
©1997 American Physical Society