Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, and Takatomo Enoki
Phys. Rev. Lett. 78, 1335 – Published 17 February 1997
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Abstract

We have confirmed that a spin-orbit interaction in an inverted In0.53Ga0.47As/In0.52Al0.48As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].

  • Received 23 July 1996

DOI:https://doi.org/10.1103/PhysRevLett.78.1335

©1997 American Physical Society

Authors & Affiliations

Junsaku Nitta, Tatsushi Akazaki, and Hideaki Takayanagi

  • NTT Basic Research Laboratories, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-01, Japan

Takatomo Enoki

  • NTT System Electronics Laboratories, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-01, Japan

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Issue

Vol. 78, Iss. 7 — 17 February 1997

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