Semiconductorlike Behavior of Electrical Resistivity in Heusler-type Fe2VAl Compound

Y. Nishino, M. Kato, S. Asano, K. Soda, M. Hayasaki, and U. Mizutani
Phys. Rev. Lett. 79, 1909 – Published 8 September 1997
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Abstract

An anomalous negative temperature dependence of electrical resistivity has been observed in (Fe1xVx)3Al alloys with V compositions up to x=0.35. In particular, the Heusler-type Fe2VAl compound is found to be on the verge of magnetic ordering and to exhibit a semiconductorlike behavior with the resistivity reaching 3000μΩcm at 2 K, in spite of the possession of a clear Fermi cutoff as revealed in photoemission valence-band spectra. A substantial mass enhancement deduced from specific heat measurements suggests that Fe2VAl is a possible candidate for a 3d heavy-fermion system.

  • Received 7 March 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.1909

©1997 American Physical Society

Authors & Affiliations

Y. Nishino, M. Kato, and S. Asano

  • Department of Materials Science and Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Japan

K. Soda, M. Hayasaki, and U. Mizutani

  • Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-01, Japan

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Vol. 79, Iss. 10 — 8 September 1997

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