Electron Conduction through Surface States of the Si(111)-( 7×7) Surface

Seiji Heike, S. Watanabe, Y. Wada, and T. Hashizume
Phys. Rev. Lett. 81, 890 – Published 27 July 1998
PDFExport Citation

Abstract

Electronic properties of the Si(111)(7×7) surface are evaluated by scanning tunneling microscopy/spectroscopy (STM/STS) using artificially fabricated insulating trenches. When the surface is surrounded by a closed trench, the effect of the Schottky barrier naturally formed between the surface states and the bulk states is observed by STM. When a half-closed tape-shaped structure surrounded by the trench is fabricated, the current path is dominated by that through surface states. Its conductivity is estimated by measuring the voltage drop along the structure.

  • Received 23 January 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.890

©1998 American Physical Society

Authors & Affiliations

Seiji Heike1,2, S. Watanabe3, Y. Wada1,2, and T. Hashizume1

  • 1Advanced Research Laboratory, Hitachi, Ltd., 2520 Akanuma, Hatoyama, Saitama 350-0395, Japan
  • 2CREST, Japan Science and Technology Corporation (JST), 2520 Akanuma, Hatoyama, Saitama 350-0395, Japan
  • 3Department of Material Science, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 81, Iss. 4 — 27 July 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×