Direct Observation of Excitonic Rabi Oscillations in Semiconductors

A. Schülzgen, R. Binder, M. E. Donovan, M. Lindberg, K. Wundke, H. M. Gibbs, G. Khitrova, and N. Peyghambarian
Phys. Rev. Lett. 82, 2346 – Published 15 March 1999
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Abstract

We observe multiple excitonic optical Rabi oscillations in a semiconductor quantum well. Up to eight oscillation periods of the heavy-hole exciton density on a subpicosecond time scale are observed. An approximate linear dependence of the oscillation frequency on the light field amplitude is established. The experiment is based on a two-color detection scheme which allows for the observation of the heavy-hole exciton density via transmission changes at the light-hole exciton. The observations are in good agreement with theoretical computations based on multiband semiconductor Bloch equations.

  • Received 8 December 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.2346

©1999 American Physical Society

Authors & Affiliations

A. Schülzgen1,*, R. Binder1, M. E. Donovan1, M. Lindberg2, K. Wundke1, H. M. Gibbs1, G. Khitrova1, and N. Peyghambarian1

  • 1Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
  • 2Institutionen för Fysik, Åbo Akademi, Porthansgatan 3, 20500 Åbo, Finland

  • *Electronic address: axel@u.arizona.edu

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Vol. 82, Iss. 11 — 15 March 1999

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