Abstract
We search for general patterns that explain the low field magnetoresistance at low temperatures in the system . The observed linear dependence of the low field magnetoresistance with the saturation magnetization for the series is related to the antisite disorder at the and sites. This is explained in terms of a spin dependent crossing of intragranular barriers originated from the presence of antiferromagnetic patches that naturally develop when antisite disorder occurs in the double perovskite. The presence of a moderate level of antisite disorder is at the very root of low field magnetoresistance although effects such as disorder distribution, connectivity, or morphology add their contribution.
- Received 7 September 2000
DOI:https://doi.org/10.1103/PhysRevLett.86.2443
©2001 American Physical Society