Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode

Takaaki Koga, Junsaku Nitta, Hideaki Takayanagi, and Supriyo Datta
Phys. Rev. Lett. 88, 126601 – Published 12 March 2002
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Abstract

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the IV curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the IV curve.

  • Received 1 October 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.126601

©2002 American Physical Society

Authors & Affiliations

Takaaki Koga*, Junsaku Nitta, and Hideaki Takayanagi

  • NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan

Supriyo Datta

  • School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907

  • *Also with Nanostructure and Material Property, PRESTO, Japan Science and Technology Corporation (JST). Electronic address: koga@will.brl.ntt.co.jp

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Issue

Vol. 88, Iss. 12 — 25 March 2002

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