Quantitative Electron Holography of Biased Semiconductor Devices

A. C. Twitchett, R. E. Dunin-Borkowski, and P. A. Midgley
Phys. Rev. Lett. 88, 238302 – Published 24 May 2002
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Abstract

Electron holography is used to measure electrostatic potential profiles across reverse-biased Si pn junctions in situ in the transmission electron microscope. A novel sample geometry based on focused ion-beam milling is developed, and results are obtained for a range of sample thicknesses and bias voltages to allow the holographic contrast to be interpreted. The physical and electrical nature of the sample surface, which is affected by sample preparation and electron beam irradiation, is discussed.

  • Received 4 March 2002

DOI:https://doi.org/10.1103/PhysRevLett.88.238302

©2002 American Physical Society

Authors & Affiliations

A. C. Twitchett, R. E. Dunin-Borkowski, and P. A. Midgley

  • Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom

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Vol. 88, Iss. 23 — 10 June 2002

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