Chemical Manipulation of High-TC Ferromagnetism in ZnO Diluted Magnetic Semiconductors

Kevin R. Kittilstved, Nick S. Norberg, and Daniel R. Gamelin
Phys. Rev. Lett. 94, 147209 – Published 15 April 2005
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Abstract

We report the use of targeted p- and n-type chemical perturbations to manipulate high-TC ferromagnetism in Mn2+ZnO and Co2+ZnO in predictable and reproducible ways. We demonstrate a clear correlation between nitrogen and high-TC ferromagnetism for Mn2+ZnO and an inverse correlation for Co2+ZnO, both as predicted by recent theoretical models. These chemical perturbations reveal rich possibilities for exerting external control over high-TC spin ordering in diluted magnetic semiconductors.

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  • Received 6 November 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.147209

©2005 American Physical Society

Authors & Affiliations

Kevin R. Kittilstved, Nick S. Norberg, and Daniel R. Gamelin

  • Department of Chemistry and Center for Nanotechnology, University of Washington, Seattle, WA 98195-1700, USA

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Issue

Vol. 94, Iss. 14 — 15 April 2005

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