Transient Topographies of Ion Patterned Si(111)

Ari-David Brown, Jonah Erlebacher, Wai-Lun Chan, and Eric Chason
Phys. Rev. Lett. 95, 056101 – Published 25 July 2005

Abstract

The surface of high fluence ion-sputtered Si(111) was found to exhibit a rich variety of transient one- and two-dimensional topographies that may be exploited as tunable self-organized arrays of nanostructures. Such transient effects are only partially described by analytical models of sputter patterning. However, a discrete atom kinetic Monte Carlo simulation model incorporating curvature-dependent sputtering and surface diffusion reproduces many aspects of the transient morphological evolution, and clarifies the minimal model of sputter patterning.

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  • Received 29 October 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.056101

©2005 American Physical Society

Authors & Affiliations

Ari-David Brown and Jonah Erlebacher*

  • Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA

Wai-Lun Chan and Eric Chason

  • Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912, USA

  • *Corresponding author. Electronic address: Jonah. Erlebacher@jhu.edu

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Issue

Vol. 95, Iss. 5 — 29 July 2005

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