Filling Fraction Limit for Intrinsic Voids in Crystals: Doping in Skutterudites

X. Shi, W. Zhang, L. D. Chen, and J. Yang
Phys. Rev. Lett. 95, 185503 – Published 26 October 2005

Abstract

The doping limit or the filling fraction limit (FFL) of various impurities for the intrinsic voids in the lattice of CoSb3 is studied by the density functional method. The FFL is shown to be determined not only by the interaction between the impurity and host atoms but also by the formation of secondary phases between the impurity atoms and one of the host atoms. The predicted FFLs for Ca, Sr, Ba, La, Ce, and Yb in CoSb3 are in excellent agreement with reported experimental data. A correlation between the FFL of an impurity atom and its valence state and electronegativity is discovered.

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  • Received 17 May 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.185503

©2005 American Physical Society

Authors & Affiliations

X. Shi1, W. Zhang1, L. D. Chen1, and J. Yang2

  • 1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Materials and Processes Laboratory, General Motors R&D Center, Warren, Michigan, USA

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Issue

Vol. 95, Iss. 18 — 28 October 2005

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