Effect of Epitaxial Strain on the Spontaneous Polarization of Thin Film Ferroelectrics

Claude Ederer and Nicola A. Spaldin
Phys. Rev. Lett. 95, 257601 – Published 12 December 2005

Abstract

Epitaxial strain can substantially enhance the spontaneous polarizations and Curie temperatures of ferroelectric thin films compared to the corresponding bulk materials. In this Letter we use first principles calculations to calculate the effect of epitaxial strain on the spontaneous polarization of the ferroelectrics BaTiO3, PbTiO3, and LiNbO3, and the multiferroic material BiFeO3. We show that the epitaxial strain dependence of the polarization varies considerably for the different systems, and in some cases is, in fact, very small. We discuss possible reasons for this different behavior and show that the effect of epitaxial strain can easily be understood in terms of the piezoelectric and elastic constants of the unstrained materials. Our results provide a computational tool for the quantitative prediction of strain behavior in ferroelectric thin films.

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  • Received 4 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.257601

©2005 American Physical Society

Authors & Affiliations

Claude Ederer* and Nicola A. Spaldin

  • Materials Research Laboratory and Materials Department, University of California, Santa Barbara, California 93106, USA

  • *Electronic address: ederer@mrl.ucsb.edu

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Issue

Vol. 95, Iss. 25 — 16 December 2005

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