Anderson Localization in Carbon Nanotubes: Defect Density and Temperature Effects

Blanca Biel, F. J. García-Vidal, Angel Rubio, and Fernando Flores
Phys. Rev. Lett. 95, 266801 – Published 19 December 2005

Abstract

The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that divacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of divacancies (5–9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, about 15–65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

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  • Received 29 July 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.266801

©2005 American Physical Society

Authors & Affiliations

Blanca Biel1, F. J. García-Vidal1,*, Angel Rubio2,3,4,5, and Fernando Flores1

  • 1Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
  • 2Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany
  • 3Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, Centro Mixto CSIC-UPV/EHU, San Sebastián, Spain
  • 4Donostia International Physics Center, E-20018 San Sebastián, Spain
  • 5European Theoretical Spectroscopy Facility

  • *Corresponding author. Electronic address: fj.garcia@uam.es

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Issue

Vol. 95, Iss. 26 — 31 December 2005

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