Semiconductor Nanowire Ring Resonator Laser

Peter J. Pauzauskie, Donald J. Sirbuly, and Peidong Yang

Phys. Rev. Lett. 96, 143903 – Published 13 April 2006

Abstract

Nanowires of the wide band-gap semiconductor gallium nitride (GaN) have been shown to act as room-temperature uv lasers. Recent advances in nanomanipulation have made it possible to modify the shape of these structures from a linear to a pseudoring conformation. Changes to the optical boundary conditions of the lasing cavity affect the structure’s photoluminescence, photon confinement, and lasing as a function of ring diameter. For a given cavity, ring-mode redshifting is observed to increase with decreasing ring diameter. Significant shifts, up to 10 nm for peak emission values, are observed during optical pumping of a ring resonator nanolaser compared to its linear counterpart. The shifting appears to result from conformational changes of the cavity rather than effects such as band-gap renormalization, allowing the mode spacing and position to be tuned with the same nanowire gain medium.

Received 28 January 2006

DOI:https://doi.org/10.1103/PhysRevLett.96.143903

Authors & Affiliations

Peter J. Pauzauskie, Donald J. Sirbuly, and Peidong Yang^*

Department of Chemistry, University of California at Berkeley, Berkeley, California 94720, USA
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

^*To whom correspondence should be addressed. Email address: p_yang@berkeley.edu

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Issue

Vol. 96, Iss. 14 — 14 April 2006

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