Topological-Metal to Band-Insulator Transition in (Bi1xInx)2Se3 Thin Films

Matthew Brahlek, Namrata Bansal, Nikesh Koirala, Su-Yang Xu, Madhab Neupane, Chang Liu, M. Zahid Hasan, and Seongshik Oh
Phys. Rev. Lett. 109, 186403 – Published 31 October 2012

Abstract

By combining transport and photoemission measurements on (Bi1xInx)2Se3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x3%7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x15%, the metal becomes a variable-range-hopping insulator. Finally, above x25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.

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  • Received 26 April 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.186403

© 2012 American Physical Society

Authors & Affiliations

Matthew Brahlek1, Namrata Bansal2, Nikesh Koirala1, Su-Yang Xu3, Madhab Neupane3, Chang Liu3, M. Zahid Hasan3, and Seongshik Oh1,*

  • 1Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
  • 2Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
  • 3Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey, 08544, USA

  • *To whom all correspondence should be addressed. ohsean@physics.rutgers.edu

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Vol. 109, Iss. 18 — 2 November 2012

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