Mobility anisotropy of two-dimensional semiconductors

Haifeng Lang, Shuqing Zhang, and Zhirong Liu
Phys. Rev. B 94, 235306 – Published 23 December 2016

Abstract

The carrier mobility of anisotropic two-dimensional semiconductors under longitudinal acoustic phonon scattering was theoretically studied using deformation potential theory. Based on the Boltzmann equation with the relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was derived, showing that the influence of effective mass on mobility anisotropy is larger than those of deformation potential constant or elastic modulus. Parameters were collected for various anisotropic two-dimensional materials (black phosphorus, Hittorf's phosphorus, BC2N, MXene, TiS3, and GeCH3) to calculate their mobility anisotropy. It was revealed that the anisotropic ratio is overestimated by the previously described method.

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  • Received 11 July 2016
  • Revised 26 November 2016

DOI:https://doi.org/10.1103/PhysRevB.94.235306

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Haifeng Lang1, Shuqing Zhang2, and Zhirong Liu1,2,3,*

  • 1College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
  • 2Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
  • 3State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China

  • *liuzhirong@pku.edu.cn

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Issue

Vol. 94, Iss. 23 — 15 December 2016

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