Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Gate Dielectric

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited - as Gate Dielectric | IEEE Journals & Magazine | IEEE Xplore