Paper
23 December 2003 Factors affecting silicon membrane burst strength
Albert K. Henning, Sapna Patel, Michael Selser, Bradford A. Cozad
Author Affiliations +
Abstract
Factors affecting the fracture strength of single-crystal silicon membranes are assessed. These factors include: membrane shape at the membrane’s intersection with structural frames or sidewalls, membrane thickness, membrane surface roughness, membrane mis-orientation to the principal crystallographic axes, wafer starting material quality, membrane stress (or pre-tension), and microstructure and shape at bond interfaces, such as the anodic bond interface between membrane and Pyrex wafers. Measurements of fracture strength versus these factors are made. Direct measurements of stress are also made using micro-Raman techniques. Simulations of membrane structures are studied, in order to evaluate the measurements. The results indicate that the predominant factor affecting fracture strength is surface roughness.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert K. Henning, Sapna Patel, Michael Selser, and Bradford A. Cozad "Factors affecting silicon membrane burst strength", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.524648
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Cited by 12 scholarly publications.
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KEYWORDS
Silicon

Surface roughness

Semiconducting wafers

Interfaces

Etching

Crystals

Wafer bonding

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