Crystal lattice dynamics of various silicon-carbide polytypes

Stanislaw Nowak

doi:10.1117/12.435822

10 August 2001 Crystal lattice dynamics of various silicon-carbide polytypes

Stanislaw Nowak

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435822
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

A valence force field model with an added ionic interaction is applied to an explanation of phonon dispersion curves in 6H-SiC. The phonon dispersion curves in 3C-, 2H-, and 4H-SiC are calculated within the same model. Our results are compared with the published result of ab initio calculations. One can suppose that the present model may be applied for other polytypes of SiC. A phonon contribution to Helmholtz energy is determined for the simplest four polytypes. The results indicate a stability of hexagonal polytypes in relation to the cubic one at high temperatures.

Citation Download Citation

Stanislaw Nowak "Crystal lattice dynamics of various silicon-carbide polytypes", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435822

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