Vertical Bridgman growth of Cd(1-x)Zn(x)Te for room temperature radiation detectors

Kelly A. Jones; Guido Ciampi; Christie E. Skrip

doi:10.1117/12.738674

21 September 2007 Vertical Bridgman growth of Cd_1-x Zn_xTe for room temperature radiation detectors

Kelly A. Jones, Guido Ciampi, Christie E. Skrip

Proceedings Volume 6706, Hard X-Ray and Gamma-Ray Detector Physics IX; 670607 (2007) https://doi.org/10.1117/12.738674
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

Low pressure Electro-Dynamic Gradient freeze (EDG) method has been used to grow compensated, high resistivity Cd(1-x)ZnxTe for x and gamma ray detectors. All growths contained excess Tellurium which is added to the growth. Ampoule design and setup to limit vapor transport was determined to be important. Ingots grown in a Pyrolitic Coated Graphite crucible are shown to provide a good response to ionizing radiation at room temperature and can be used multiple times. The highest doping levels of Aluminum are shown to improve mobility lifetime products for electrons and average 8.7x10^-4 cm²/V at 0.5 μsecond shaping fitting the Hecht relation.

Citation Download Citation

Kelly A. Jones, Guido Ciampi, and Christie E. Skrip "Vertical Bridgman growth of Cd_1-x Zn_xTe for room temperature radiation detectors", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 670607 (21 September 2007); https://doi.org/10.1117/12.738674

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