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Specific features of Bi2Te3 doping with Sn

  • Semiconductors and Insulators
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Abstract

The effect of doping bismuth telluride with tin, on its electrophysical properties, has been studied. It is shown that the main features in the transport coefficients of Bi2Te3:Sn can be explained by the existence of resonant Sn states within the valence band. The existence of resonant Sn states was confirmed by codoping Bi2Te3:Sn with the electroactive impurity I.

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Authors and Affiliations

  1. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    M. K. Zhitinskaya & S. A. Nemov

  2. A. A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia

    T. E. Svechnikova

Authors
  1. M. K. Zhitinskaya
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  2. S. A. Nemov
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  3. T. E. Svechnikova
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 1428–1432 (August 1998)

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Zhitinskaya, M.K., Nemov, S.A. & Svechnikova, T.E. Specific features of Bi2Te3 doping with Sn. Phys. Solid State 40, 1297–1300 (1998). https://doi.org/10.1134/1.1130548

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  • DOI: https://doi.org/10.1134/1.1130548

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