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Neutron transmutation doping in semiconductors: Science and applications

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Abstract

Different aspects of neutron transmutation doping (NTD) of silicon and germanium are considered, with a special emphasis on the contribution by scientists of the Ioffe Physicotechnical Institute, Russian Academy of Sciences, to the solution of these problems. Fundamental studies related to determination of the cross sections of thermal-neutron capture by isotopes of semiconducting materials, annealing of radiation defects produced by fast reactor neutrons, and the use of NTD for probing the structure of the Ge impurity band are reviewed. Problems involved in industrial-scale production of NTD-Si, application of NTD-Si and NTD-Ge to fabrication of power thyristors, nuclear-particle and IR detectors, deep-cooled thermistors, and bolometers are discussed. The paper concludes with a consideration of prospects in the application of NTD-Si and NTD-Ge based on the use of materials with a controlled isotopic composition.

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References

  1. K. Lark-Horovitz, in Proceedings of the Conference on Semiconducting Materials, edited by H. K. Henish (Butterworth, London, 1951), p. 47; [Russian translation in Semiconducting Materials, edited by V. M. Tuchkevich (IL, Moscow, 1954), p. 62].

    Google Scholar 

  2. Neutron Transmutation Doping in Semiconductors, edited by J. Meese (Plenum Press, New York, 1979; Mir, Moscow, 1982); Semiconductor Doping in Nuclear Reactions [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1981).

    Google Scholar 

  3. M. S. Schnoller, IEEE Trans. Electron Devices ED-21, 313 (1974).

    Google Scholar 

  4. I. N. Voronov, A. N. Erykalov, E. I. Ignatenko, M. L. Kozhukh, M. A. Lyutov, Yu. V. Petrov, V. M. Tuchkevich, and I. S. Shlimak, USSR Inventor’s Certificate 1063872 (1982).

  5. H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).

    ADS  Google Scholar 

  6. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984; Nauka, Moscow, 1979).

    Google Scholar 

  7. N. F. Mott, Metal-Insulator Transition (Taylor & Francis, London, 1990).

    Google Scholar 

  8. I. S. Shlimak, USSR Inventor’s Certificate 437931 (1972).

  9. E. E. Haller, Infrared Phys. Technol. 35, 127 (1994).

    Article  ADS  Google Scholar 

  10. Low-Temperature Detectors for Neutrinos and Dark Matter IV, edited by N. E. Both and G. L. Salmon (Oxford, 1991).

  11. T. Shutt, N. Wang, B. Ellman, Y. Giraud-Héraud, C. Stubbs, P. D. Barnes, Jr., A. Cummings, A. Da Silva, J. Emes, E. E. Haller, A. E. Lange, J. Rich, R. R. Ross, B. Sadoulet, G. Smith, W. Stockwell, S. White, B. A. Young, and D. Yvon, Phys. Rev. Lett. 69, 3531 (1992).

    ADS  Google Scholar 

  12. A. G. Zabrodskii, JETP Lett. 33, 243 (1981).

    ADS  Google Scholar 

  13. E. E. Haller et al., in: Neutron Transmutation Doping of Semiconductor Materials, edited by R. D. Larrbee (Plenum, New York, 1984), p. 21.

    Google Scholar 

  14. A. N. Ionov, M. N. Matveev, and D. V. Shmikk, Zh. Tekh. Fiz. 59, No. 6, 169 (1989) [Sov. Phys. Tech. Phys. 34, 691 (1989)].

    Google Scholar 

  15. V. A. Kharchenko and S. P. Solov’ev, Fiz. Tekh. Poluprovodn. 5, 1641 (1971) [Sov. Phys. Semicond. 5, 1437 (1971)].

    Google Scholar 

  16. I. Shlimak, A. N. Ionov, R. Rentzsch, and J. M. Lazebnik, Semicond. Sci. Technol. 11, 1826 (1996).

    Article  ADS  Google Scholar 

  17. J. W. Corbett and G. D. Watkins, Radiation Effects in Semiconductors (Plenum, New York, 1971).

    Google Scholar 

  18. M. L. Kozhukh, I. S. Shlimak, V. V. Fedorov, and E. S. Yurova, Pisma Zh. Tekh. Fiz. 11, 129 (1985) [Sov. Tech. Phys. Lett. 11, 51 (1985)].

    Google Scholar 

  19. V. M. Volle, V. B. Voronkov, I. V. Grekhov, A. N. Erykalov, M. L. Kozhukh, V. A. Kozlov, Yu. V. Petrov, N. A. Sobolev, V. M. Tuchkevich, V. E. Chelnokov, and I. S. Shlimak, Electrotehnica No. 3, 34 (1984).

  20. I. S. Shlimak and V. V. Emtsev, JETP Lett. 13, 107 (1971).

    ADS  Google Scholar 

  21. Yu. A. Osipyan, V. M. Prokopenko, and V. I. Tal’yanskii, Zh. Éksp. Teor. Fiz. 87, 269 (1984) [Sov. Phys. JETP 60, 156 (1984)].

    ADS  Google Scholar 

  22. I. S. Shlimak, L. I. Zarubin, A. N. Ionov, F. M. Vorobkalo, A. G. Zabrodskii, and I. Yu. Nemish, Pisma Zh. Tekh. Fiz. 9, 377 (1983) [Sov. Tech. Phys. Lett. 9, 163 (1983)].

    Google Scholar 

  23. R. Rentzsch, A. N. Ionov, Ch. Reich, M. Müller, B. Sandow, P. Fozooni, M. J. Lea, V. Ginodman, and I. Shlimak, Phys. Status Solidi B 205, 269 (1998).

    ADS  Google Scholar 

  24. K. V. Itoh, E. E. Haller, W. L. Hansen, J. W. Beeman, A. Rudnev, A. Tikhomirov, and V. I. Ozhogin, Appl. Phys. Lett. 64, 2121 (1994).

    ADS  Google Scholar 

  25. E. E. Haller, J. Appl. Phys. 77, 2857 (1995).

    Article  ADS  Google Scholar 

  26. E. E. Haller, Semicond. Sci. Technol. 5, 319 (1990).

    Article  ADS  Google Scholar 

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Fiz. Tverd. Tela (St. Petersburg) 41, 794–798 (May 1999)

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Shlimak, I.S. Neutron transmutation doping in semiconductors: Science and applications. Phys. Solid State 41, 716–719 (1999). https://doi.org/10.1134/1.1130856

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