Abstract
Different aspects of neutron transmutation doping (NTD) of silicon and germanium are considered, with a special emphasis on the contribution by scientists of the Ioffe Physicotechnical Institute, Russian Academy of Sciences, to the solution of these problems. Fundamental studies related to determination of the cross sections of thermal-neutron capture by isotopes of semiconducting materials, annealing of radiation defects produced by fast reactor neutrons, and the use of NTD for probing the structure of the Ge impurity band are reviewed. Problems involved in industrial-scale production of NTD-Si, application of NTD-Si and NTD-Ge to fabrication of power thyristors, nuclear-particle and IR detectors, deep-cooled thermistors, and bolometers are discussed. The paper concludes with a consideration of prospects in the application of NTD-Si and NTD-Ge based on the use of materials with a controlled isotopic composition.
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References
K. Lark-Horovitz, in Proceedings of the Conference on Semiconducting Materials, edited by H. K. Henish (Butterworth, London, 1951), p. 47; [Russian translation in Semiconducting Materials, edited by V. M. Tuchkevich (IL, Moscow, 1954), p. 62].
Neutron Transmutation Doping in Semiconductors, edited by J. Meese (Plenum Press, New York, 1979; Mir, Moscow, 1982); Semiconductor Doping in Nuclear Reactions [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1981).
M. S. Schnoller, IEEE Trans. Electron Devices ED-21, 313 (1974).
I. N. Voronov, A. N. Erykalov, E. I. Ignatenko, M. L. Kozhukh, M. A. Lyutov, Yu. V. Petrov, V. M. Tuchkevich, and I. S. Shlimak, USSR Inventor’s Certificate 1063872 (1982).
H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984; Nauka, Moscow, 1979).
N. F. Mott, Metal-Insulator Transition (Taylor & Francis, London, 1990).
I. S. Shlimak, USSR Inventor’s Certificate 437931 (1972).
E. E. Haller, Infrared Phys. Technol. 35, 127 (1994).
Low-Temperature Detectors for Neutrinos and Dark Matter IV, edited by N. E. Both and G. L. Salmon (Oxford, 1991).
T. Shutt, N. Wang, B. Ellman, Y. Giraud-Héraud, C. Stubbs, P. D. Barnes, Jr., A. Cummings, A. Da Silva, J. Emes, E. E. Haller, A. E. Lange, J. Rich, R. R. Ross, B. Sadoulet, G. Smith, W. Stockwell, S. White, B. A. Young, and D. Yvon, Phys. Rev. Lett. 69, 3531 (1992).
A. G. Zabrodskii, JETP Lett. 33, 243 (1981).
E. E. Haller et al., in: Neutron Transmutation Doping of Semiconductor Materials, edited by R. D. Larrbee (Plenum, New York, 1984), p. 21.
A. N. Ionov, M. N. Matveev, and D. V. Shmikk, Zh. Tekh. Fiz. 59, No. 6, 169 (1989) [Sov. Phys. Tech. Phys. 34, 691 (1989)].
V. A. Kharchenko and S. P. Solov’ev, Fiz. Tekh. Poluprovodn. 5, 1641 (1971) [Sov. Phys. Semicond. 5, 1437 (1971)].
I. Shlimak, A. N. Ionov, R. Rentzsch, and J. M. Lazebnik, Semicond. Sci. Technol. 11, 1826 (1996).
J. W. Corbett and G. D. Watkins, Radiation Effects in Semiconductors (Plenum, New York, 1971).
M. L. Kozhukh, I. S. Shlimak, V. V. Fedorov, and E. S. Yurova, Pisma Zh. Tekh. Fiz. 11, 129 (1985) [Sov. Tech. Phys. Lett. 11, 51 (1985)].
V. M. Volle, V. B. Voronkov, I. V. Grekhov, A. N. Erykalov, M. L. Kozhukh, V. A. Kozlov, Yu. V. Petrov, N. A. Sobolev, V. M. Tuchkevich, V. E. Chelnokov, and I. S. Shlimak, Electrotehnica No. 3, 34 (1984).
I. S. Shlimak and V. V. Emtsev, JETP Lett. 13, 107 (1971).
Yu. A. Osipyan, V. M. Prokopenko, and V. I. Tal’yanskii, Zh. Éksp. Teor. Fiz. 87, 269 (1984) [Sov. Phys. JETP 60, 156 (1984)].
I. S. Shlimak, L. I. Zarubin, A. N. Ionov, F. M. Vorobkalo, A. G. Zabrodskii, and I. Yu. Nemish, Pisma Zh. Tekh. Fiz. 9, 377 (1983) [Sov. Tech. Phys. Lett. 9, 163 (1983)].
R. Rentzsch, A. N. Ionov, Ch. Reich, M. Müller, B. Sandow, P. Fozooni, M. J. Lea, V. Ginodman, and I. Shlimak, Phys. Status Solidi B 205, 269 (1998).
K. V. Itoh, E. E. Haller, W. L. Hansen, J. W. Beeman, A. Rudnev, A. Tikhomirov, and V. I. Ozhogin, Appl. Phys. Lett. 64, 2121 (1994).
E. E. Haller, J. Appl. Phys. 77, 2857 (1995).
E. E. Haller, Semicond. Sci. Technol. 5, 319 (1990).
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Fiz. Tverd. Tela (St. Petersburg) 41, 794–798 (May 1999)
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Shlimak, I.S. Neutron transmutation doping in semiconductors: Science and applications. Phys. Solid State 41, 716–719 (1999). https://doi.org/10.1134/1.1130856
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DOI: https://doi.org/10.1134/1.1130856