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Investigation of amorphous states of SiO2 by Raman scattering spectroscopy

  • Semiconductors and Dielectrics
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Abstract

The vitreous SiO2 samples irradiated with fast neutrons at a dose of 5×1017−2.2×1020 per cm2 are investigated by the Raman scattering technique. It is demonstrated that the maximum of the low-frequency Raman spectrum (boson peak) shifts with an increase in the irradiation dose, and the medium-range order size decreases from 25 Å for the initial glass to 19 Å for the sample subjected to irradiation at a maximum dose. It is revealed that the fast relaxation intensity obtained from analysis of the low-frequency Raman spectra linearly correlates with the specific volume of the studied samples.

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Translated from Fizika Tverdogo Tela, Vol. 42, No. 1, 2000, pp. 62–68.

Original Russian Text Copyright © 2000 by Malinovsky, Novikov, Surovtsev, Shebanin.

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Malinovsky, V.K., Novikov, V.N., Surovtsev, N.V. et al. Investigation of amorphous states of SiO2 by Raman scattering spectroscopy. Phys. Solid State 42, 65–71 (2000). https://doi.org/10.1134/1.1131169

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  • DOI: https://doi.org/10.1134/1.1131169

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