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The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x

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Abstract

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1−x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x, it is shown that the crystal perfection of these structures depends on the choice of the conditions of liquid-phase epitaxy. It is shown that mirror-smooth epitaxial layers of (Ge 2)1−x (ZnSe)x with the lowest stress levels can be obtained on GaAs (100) and Ge (111) substrates.

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References

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Authors and Affiliations

  1. Physics-Sun Physicotechnical Institute Scientific Manufacturing Organization, Academy of Sciences of the Republic of Uzbekistan, Tashkent

    A. S. Saidov, É. A. Koshchanov & A. Sh. Razzakov

Authors
  1. A. S. Saidov
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  2. É. A. Koshchanov
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  3. A. Sh. Razzakov
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Pis’ma Zh. Tekh. Fiz. 24, 12–16 (January 26, 1998)

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Saidov, A.S., Koshchanov, É.A. & Razzakov, A.S. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x . Tech. Phys. Lett. 24, 47–48 (1998). https://doi.org/10.1134/1.1261988

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  • DOI: https://doi.org/10.1134/1.1261988

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