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Conductivity and the Hall coefficient of nanostructured titanium nitride films

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Abstract

The conductivity and the Hall coefficient of nanostructured TiN films synthesized by nonreactive RF magnetron sputtering have been experimentally studied. The mechanism of conductivity and the role of grain size are discussed.

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Authors and Affiliations

  1. Institute of Chemical Physics Problems, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    R. A. Andrievski & G. V. Kalinnikov

  2. Ben-Gurion University of Negev, 84105, Beer-Sheva, Israel

    Z. M. Dashevsky

Authors
  1. R. A. Andrievski
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  2. Z. M. Dashevsky
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  3. G. V. Kalinnikov
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Translated from Pis’ma v Zhurnal Tekhnichesko\({{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma \) Fiziki, Vol. 30, No. 22, 2004, pp. 1–7.

Original Russian Text Copyright © 2004 by Andrievski, Dashevsky, Kalinnikov.

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Andrievski, R.A., Dashevsky, Z.M. & Kalinnikov, G.V. Conductivity and the Hall coefficient of nanostructured titanium nitride films. Tech. Phys. Lett. 30, 930–932 (2004). https://doi.org/10.1134/1.1829346

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  • DOI: https://doi.org/10.1134/1.1829346

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