Abstract
The possibility of obtaining a Si-SiO2 nanocomposite layer by oxidation of porous silicon is demonstrated. The nanocomposite thus prepared consists of silicon oxide with inclusions of crystalline silicon in the form of rounded particles 5 to 30 nm in diameter and a filamentary cellular structure with filaments a few nanometers thick. The I-V characteristics of these structures were measured under different sample excitation conditions (photo-and thermal stimulation). The trap concentration and effective carrier mobility are estimated. Carriers are found to be captured intensely by traps created in the large-area interface in the composite structure.
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References
A. I. Gusev and A. A. Rempel, Nanocrystalline Materials (Fizmatlit, Moscow, 2001; Cambridge International Science Publishing, Cambridge, 2004).
M. S. Ablova, M. V. Zamoryanskaya, V. I. Sokolov, and R. I. Khasanov, Pis’ma Zh. Éksp. Teor. Fiz. 29(11), 41 (2003).
B. Dac and S. P. Mc. Ginnis, Semicond. Sci. Technol. 14, 998 (1999).
L. A. Balagurov, S. C. Bauliss, A. F. Orlov, B. Unal, and D. G. Yarkin, in Proceedings of International Conference on Porous Semiconductors: Science and Technology, Madrid, 2000, p. 53.
A. G. Cullis, L. T. Ganam, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 215, 871 (1999).
T. Schmidt, K. Lischka, and W. Zulehner, Phys. Rev. B 45, 8989 (1992).
O. Bisi, S. Ossicicni, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
X. L. Wu, S. J. Xiong, D. L. Fan, Y. Gu, X. M. Bao, B. B. Sui, and M. J. Stokes, Phys. Rev. B 62(12), R7759 (2000).
M. Ballucani, V. Bondarenko, G. Lamedica, V. A. Yakovleva, and A. Ferrari, Appl. Phys. Lett. 74, 1960 (1999).
M. Stewart, E. G. Robins, T. W. Geders, M. J. Allen, H. Ch. Choi, and J. M. Buriak, in Proceedings of International Conference on Porous Semiconductors: Science and Technology, Madrid, 2000, p. 31.
D. Dimova-Malinovska, J. Lumin. 80, 207 (1998).
G. I. Skanavi, Physics of Dielectrics (Strong Field Region) (Fizmatgiz, Moscow, 1958) [in Russian].
B. E. Deal, E. H. Snow, and C. A. Mead, J. Phys. Chem. Solids 27(11–12), 1873 (1966).
A. M. Goodman, Phys. Rev. 114(2), 588 (1966).
A. P. Baraban, P. P. Konorov, and A. A. Kruchinin, Optoelectron. Poluprovodn. Tekh. 7, 31 (1985).
R. M. Hill, Philos. Mag. 24(192), 1307 (1971).
V. F. Korzo and V. N. Chernyaev, Dielectric Films in Microelectronics (Énergiya, Moscow, 1977) [in Russian].
M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973).
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 7, 2005, pp. 1316–1322.
Original Russian Text Copyright © 2005 by Sorokin, Grigor’ev, Kalmykov, Sokolov.
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Sorokin, L.M., Grigor’ev, L.V., Kalmykov, A.E. et al. Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer. Phys. Solid State 47, 1365–1371 (2005). https://doi.org/10.1134/1.1992619
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DOI: https://doi.org/10.1134/1.1992619